Abstract
An analytical expression for dark voltage-current characteristics (VCC) of double layer heterojunction (DLHJ) photodiode. It is shown that spatial inhomogeneity of energy band gap in photodiode base region allows to substantially increase the reverse current connected with thermal generation of carriers both in the base region and at the contacts. In the case when wide gap layer is remote from the metallurgical edge of p-n junction at the distance comparable with the thickness of the space charge region (SCR) a portion of negative differential resistance (NDR) may appear on the reverse branch of VCC.
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