Abstract
The paper theoretically investigates the peculiarities of the reverse branch of current–voltage characteristics (CVC) of p–n structures whose base region contains a wide band gap layer. The analysis carried out is based on the derived analytical formula for the reverse current connected with the thermal generation of carriers both in the base region and at the Ohmic contact. It is shown that in the case when the wide-gap-layer is remote from the metallurgical edge of p–n junction at a distance comparable with the thickness of the space charge region (SCR) a portion of negative differential resistance (NDR) may appear on the reverse branch of CVC.
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