Abstract
This paper introduces a novel concept of threshold voltage variation analysis using stacked-FET Power amplifier (PA). In this work, a conventional adaptive biasing circuit is merged with two stacked FET which controls and minimizes the fluctuations of the threshold voltage variation for class AB PA. Analytical equations are derived to achieve much less variation of threshold voltage shift. Comparisons of threshold voltage variation using popularly used materials like Gallium Nitride, Gallium Arsenide and Silicon with predictive technology model of 65nm and 45nm is shown. With this new conception, it is possible to reduce the impact of reliability issues on PA when threshold voltage shifts significantly.
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