Abstract
AbstractOn the basis of the quantum‐defect wave function and assuming a linear coupling, a calculus of the Huang‐Rhys factor S and the other matrix elements is made using the theory of non‐radiative multiphonon assisted carrier capture processes at deep levels in semiconductors. A fitting of the temperature dependence of the capture cross‐section of the gold acceptor level in silicon is made also, while pointing out as well the existence of high sensitivity in the absolute values of the capture rate to the S parameter. The number of phonons used is p = 8, whereas the values of the associated Huang‐Rhys factor varies accordingly to the sample.
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