Abstract
The dependences of the peak position and of the half-width of the near-band-edge luminescence band in nominally undoped semi-insulating GaAs crystals on the content of residual C and Si shallow impurities are studied at 77 K. It is shown that a rise in the impurity concentration leads to a shift of the peak position to lower energies and to an increase of the half-width. The observed effect is mainly connected with a broadening of the excitonic component of the near-band-edge luminescence band resulting from an increase in the efficiency of radiative recombination of free excitons due to their interaction with C and Si shallow impurities.
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