Abstract
In this paper, we have investigated the electrical characteristics of power lateral double-diffused MOSFETs (LDMOSFETs) having different gate lengths (2.1–3μm) and drift lengths (6.6–12.6μm) in the temperature range 100–500K. The results of this study indicate that gate length and drift region length have a great effect on electrical characteristics, but they have little effect on temperature dependence. The specific on-resistance and the off-state breakdown voltage increase with temperature. The result shows that the specific on-resistance increases exponentially with the exponent 2.2 and, by contrast, the off-state breakdown voltage increases linearly with a slope of 100mV/K (drift region concentration of measured device: 2×1015cm−3). As a result, Ron/BV, known for a figure of merit of power device, increases with temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
