Abstract
Ultra-thin body Double Gate MOS structures with strained silicon are investigated by solving the 1-D Schrödinger and Poisson equations, with open boundaries conditions on the wave functions in the gate electrodes. The electrostatics of this device architecture and its dependence on the amount of strain and on the thickness of the silicon layer is analyzed in terms of subband structure, subband population, carrier distribution within the strained-silicon layer, charge-voltage characteristics and gate tunneling current.
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