Abstract
Silicon solar cells with stripe geometry junctions are analyzed. The base region collection efficiency is found to be insensitive to the transmissivity of the electrode and/or the diffused layer but quite sensitive to the width and separation of the stripe junctions. The additional losses of carriers are mainly due to the increased bulk recombination rather than the surface recombination. In one case analyzed the collection efficiency decreases by 22% when the junctions are separated by about one sixth of the diffusion length with the surface recombination velocity at 300 cm/sec. Possible uses of the stripe-junction design in p- n junction cells and Schottky barrier cells are re-examined in the light of the new calculation and found to be less attractive than previously suggested.
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