Analysis of saturation currents and barrier height of Ta2O5 doped based on Ba0,5S0,5TiO3 photodiode

Abstract

Ba0,5Sr0,5TiO3 (BST) thin films have been prepared on Si (100) p-type substrates using a chemical solution deposition (CSD) method and doped with 0%, 2.5%, 5%, 7.5%, 10% tantalum pentaoxide (Ta2O5). Chemical Solution Deposition Method (CSD) used the spin coating techniques with a rotational speed of 3000 rpm for 30 seconds. BST thin films annealed at a temperature 850 °C. Various electrical parameters such as saturation current, series resistance and barrier height have been calculated from the analysis of experimental I–V results and discussed in detail. The series resistance was found from the experiment of 42.8 MΩ, 7.9 MΩ, 7.2 MΩ, 2.03 MΩ, 1.2 MΩ for variation doping content. The saturation current of 22.3 μA, 2.7 μA, 9.7 μA, 4.82 μA, 4.50 μA was obtained in BST thin film with variation doping content. Then, the barrier height of 0.56 eV, 0.62 eV, 0.58 eV, 0.54 eV, 0.60 eV was obtained in BST thin film with variation doping content. The optical characterization and analysis microstructure such as XRD, EDX were discussed in detail.