Abstract
The effects of growth pressure on the properties of CdTe epilayers obtained from a horizontal MOCVD reactor was investigated in this work. Items studied included: growth rate variation, orientation on (100)GaAs substrate, full width at half maximum from DCRC, low temperature PL spectra and Hall measurements. Our results indicated that an intermediate growth pressure such as 300-400 torr may produce the best quality CdTe films.
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