Abstract
epitaxial layers have been grown on (100) substrates. The effects of growth pressure and substrate temperature on epilayer quality and indium solid composition were examined using x‐ray diffraction patterns and photoluminescence (PL) measurements. Mirror‐like surfaces can be obtained at growth pressure 170 Torr and substrate temperature 600°C. The x‐ray diffraction pattern degraded and the PL intensity decreased when the growth pressure increased above 200 Torr. The indium solid composition was found to decrease with increasing growth temperature. This result was compared with that grown under atmospheric pressure reported by Bougnot et al. (13). The indium distribution coefficients (the ratio of solid to vapor‐phase composition) as a function of growth pressure and substrate temperature have been studied. The full width at half maximum of 10 K photoluminescence peaks was found to increase with increasing lattice mismatch.
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