Abstract
In order to determine the fractional components of the interstitialcy mechanism for Sb, P and self-diffusions, dISb, dIP and dIsd, and the supersaturation ratios of vacancies and self-interstitials, sV and sI, from the experimental results of the oxidation-enhanced diffusion (OED) of P, oxidation-retarded diffusion (ORD) of Sb and growth of the interstitial-type stacking fault by oxidation (OSF), the equations of OED, ORD and OSF and of the special relation between sV and sI were solved simultaneously. The effect of the stacking fault energy upon growth of the OSF was taken into account in the OSF equation. As the experimental results of OED, ORD and OSF did not satisfy their equations exactly, nine kinds of solutions were obtained and three of them were shown. The errors caused by the lack of exact satisfaction were shown. A dIsd much smaller than 0.5 was obtained.
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