Abstract
A model for the growth and shrinkage of stacking faults in silicon is presented. It accounts for interstitial traps and a nonuniform concentration of intrinsic point defects. The complete system of balance equations of intrinsic point defects is solved numerically to simulate the kinetics of stacking faults during oxidation under the assumption that float-zone silicon contains less interstitial traps than Czochralski silicon. Investigation of the influence of different interstitial trap concentrations on the growth and shrinkage of surface stacking faults shows that the kinetics of surface stacking faults is not strongly affected by the presence of interstitial traps. Surface stacking faults are expected to grow in float-zone and Czochralski silicon in a similar way.
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