Analysis of noise behavior and reliability of pocket doped negative capacitance FET under the impact of trap charges and temperature

Abstract

This paper represents an in-depth investigation of low to high frequency noise performance of highly doped double pocket double gate NCFET (HDDP-DG-NCFET) and single gate NCFET (SG-NCFET) in the existence of Uniform and Gaussian trap charges at various frequencies and temperatures (200 K–400 K). The drain current noise spectral density (Sid) and Gate voltage noise spectral density (Svg) at different frequencies in existence of both type of trap charges are explored. In addition, the Sid as a function of frequency for various ferroelectric thicknesses (Tfe) is examined in the existence of Uniform trap charges. The findings show that, at lower frequencies flicker noise dominates, while at higher frequencies, the dominant noise element is diffusion noise. For the whole range of considered frequencies, the Generation-Recombination (G-R) noise is more substantial in existence of trap charges. It has been found that, the net Sid value of the HDDP-DG-NCFET for Uniform and Gaussian types of trap distribution is 6.98 × 10−14A2/Hz and 6.17 × 10−14A2/Hz, respectively. Moreover, the examination of Sid for various Tfe in presence of traps illustrates the significance of the ferroelectric layer in obtaining lower value of net Sid, particularly in the higher frequency region and the minimal net Sid value for Tfe = 7 nm as compared to other Tfe values. Finally, to examine the device's reliability, the temperature investigation for the noise in the non-existence and existence of trap charges demonstrates that, the impact of an increase in noise caused by the existence of trap charges is much pronounced at lower temperatures and smaller gate voltages, where G-R noise is observed to be the dominant noise component.