Abstract
The properties of bipolar transistors as input devices for low noise head-amplifiers for high energy applications of silicon detectors are discussed. Theoretical and experimental investigations have been carried out for three different configurations of head amplifiers. The results show that under the particular constraints of high energy experiments, the bipolar transistor has some features that make it competitive, if not even superior to the so far widely employed junction field-effect transistors. These constraints are the short processing times that have to be used to cope with the very high counting rates and the large detector capacitances of some experiments. It emerges from the analysis that the bipolar transistor appears to be an attractive input device for head amplifiers intended for large acquisition systems associated with silicon detectors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Nuclear Instruments and Methods In Physics Research
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.