Abstract
In this paper, for the first time we compare 1/f noise in both complementary bipolar and complementary MOSFET transistors fabricated on thick film bonded SOI with full dielectric isolation capability. For MOS devices, a new relationship for 1/f noise is given which allows intuitive insight when comparing technologies. Both bipolar and MOS transistors show agreement to a number fluctuation model for noise mechanisms. A factor of 2 lower 1/f noise is determined for the PNP in comparison to NPN transistors. For this technology generation, bipolar transistors indicate an order of magnitude lower noise level when compared to MOSFETs under similar drive currents and effective area conditions. Finally, we discuss generation recombination noise, which can be observed in some of the devices.
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