Abstract
The lattice thermal conductivity of GaAs has been analysed in the entire temperature range 100–800 K in the frame of the Sharma-Dubey-Verma (SDV) model of phonon conductivity, and very good agreement has been found between the calculated and experimental values of the lattice thermal conductivity in the entire temperature range of study. The temperature exponentm(T) for the three-phonon scattering relaxation rate for GaAs has also been calculated in the above temperature range. The separate percentage contributions due to transverse and longitudinal phonons have also been studied.
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