Abstract
A theoretical model of flatband voltage (VFB) of metal/high-k/SiO2/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.
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