Abstract
Band alignment of TiN/HfO 2 interface of TiN/HfO 2 /SiO 2 /Si stack is investigated by x-ray photoelectron spectroscopy (XPS). The p-type Schottky barrier height (p-SBH) is found to increase with thicker HfO 2 thickness. Since considering only the metal/dielectric interface cannot explain this phenomenon, band alignment of TiN/HfO 2 interface of TiN/HfO 2 /SiO 2 /Si stack is demonstrated based on band alignment of entire gate stack. Dependence of p-SBH on HfO 2 thickness is interpreted and contributed to fixed charges in gate stack, interfacial gap state charges at HfO 2 /SiO 2 interface, and space charges in Si substrate. Electrical measurements of capacitor structures further support XPS results and corresponding explanation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
