Abstract
Band alignment of TiN/HfO 2 interface of TiN/HfO 2 /SiO 2 /Si stack is investigated by x-ray photoelectron spectroscopy (XPS). The p-type Schottky barrier height (p-SBH) is found to increase with thicker HfO 2 thickness. Since considering only the metal/dielectric interface cannot explain this phenomenon, band alignment of TiN/HfO 2 interface of TiN/HfO 2 /SiO 2 /Si stack is demonstrated based on band alignment of entire gate stack. Dependence of p-SBH on HfO 2 thickness is interpreted and contributed to fixed charges in gate stack, interfacial gap state charges at HfO 2 /SiO 2 interface, and space charges in Si substrate. Electrical measurements of capacitor structures further support XPS results and corresponding explanation.
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