Abstract
Band alignment of TiN/HfO 2 /SiO 2 /Si stack is systematically investigated by X-ray photoelectron spectroscopy. The differences of Si 2p binding energies between SiO 2 and Si substrate are experimentally found to decrease with the sequence of SiO 2 /Si, 4 nm HfO 2 /SiO 2 /Si and 2 nm HfO 2 /SiO 2 /Si stacks. The p-type Schottky barrier heights at TiN/HfO 2 interface of TiN/HfO 2 /SiO 2 /Si stack are experimentally estimated to increase with thicker HfO 2 thickness. A physical model based on band alignment of TiN/HfO 2 /SiO 2 /Si stack is employed to successfully explain these experimental results. The positive VFB shift of TiN/HfO 2 /SiO 2 /Si stack and Fermi level pinning are also physically demonstrated by this model and attributed to interface induced gap states at TiN/HfO 2 and HfO 2 /SiO 2 interfaces.
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