Analysis of electrical conduction in epitaxial layer structures using the mobility spectrum technique

Abstract

The mobility spectrum technique is especially useful in the analysis of the electrical conduction in multilayer epitaxial semiconductor structures. If the electric charge can flow between layers close to the side of the sample, the electric conduction of the multilayer structure is described similarly to the electric conduction in the homogeneous sample. The mobility spectrum of the multilayer structure is the sum of the mobility spectra of all the layers, corrected by the layer thickness. The iteration procedure successfully transforms the conductivity tensor components into the mobility spectrum.