Mobility spectrum approach in the analysis of the electrical conduction of a GaAs layer grown by molecular beam epitaxy

Abstract

A new algorithm of the analysis of the electrical conduction in the layers forming a semiconductor structure has been described. In the algorithm, in contrast to earlier approaches, the mobility spectrum technique has been applied to the sheet conductivity tensor. The standard carriers parameters have been estimated from the tensor components in the high and low magnetic field limits. The proposed method has been illustrated by the analysis of results of the electrical conduction measurements versus magnetic field performed up to 1.6 T at 77 K in a molecular beam epitaxial (MBE) grown GaAs:Si structure. The sample was an MBE GaAs:Si layer grown on a buffer epilayer. As a result of the analysis, the mobility spectra and the standard parameters describing carriers in different layers have been found.