Abstract
Carbon nanotube (CNT) is one of the promising materials for MOS technology. In this study, the impact of dielectric materials and temperature for a certain diameter of CNT has been discussed related to ballistic CNTFET by using non-equilibrium Green’s function (NEGF) formalism. With the dielectric materials like polyethylene (2.25), hafnium silicate (11), zirconium dioxide (19) and titanium dioxide (40) the device characteristics such as drain induced barrier lowering (DIBL), Sub threshold swing (SS), carrier injection velocity (V_inj), output conductance (gm), voltage gain (AV), transconductance (gm) have been investigated.
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