Investigation of Dielectric Dependency on CNTFET Characteristics in Ballistic Regime

Abstract

Carbon nanotube (CNT)-based field effect transistor is replacing the bulk metal oxide field effect transistor. Herein, the cylindrical carbon nanotube field effect transistor is considered to study the effect of different dielectrics on the characteristics of carbon nanotube field effect transistor. Different dielectric materials like Teflon, silicon nitride, zirconium dioxide, hafnium dioxide and titanium dioxide are analyzed, and the comparative analysis is done with respect to several parameters like carrier injection velocity, conductance, drain-induced barrier lowering, transconductance, subthreshold swing and voltage gain. The overall investigation is made considering the parameters such as nanotube diameter (0.6 nm), gate insulator thickness (1.5 nm) for all the dielectrics, Vth (0.32 V), gate and drain control parameters (1 and 0), series resistance (0), at temperature 300 K, with final gate and drain voltages as 2 and 1 V. The impacts of dielectric materials on such parameters are investigated in FETToy and the relationship is understood.