Abstract
Taking SiO2/HfO2 multilayer dielectric films as the research object, when the total laser energy is the same, the effects of different laser parameters on film damage under 1064 nm and 355 nm composite wavelength pulse irradiation are analyzed. The results show that different energy ratios lead to exponential differences in the electron number density inside the film, but they are far from reaching the field damage threshold. Comprehensive analysis shows that film damage is mainly affected by thermal melt and stress. The greater the difference between an energy ratio of 1ω and 3ω, the greater the thermal stress in the film, the higher the stress peak, and the more obvious the damage effect of thermal stress on the film. Under the condition of 50%1ω, the thermal effect in the film is minimal, which can ensure that the film is not damaged as much as possible. The model method used in this paper only takes the current film system as an example for specific research and can be extended to all film systems for analysis.
Published Version
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