Abstract
The performance of camel gate GaAs FET's and its dependence on device parameters has been described. In particular, the dependence of the performance on the doping-thickness product of the p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> layer was examined. Theoretical calculations indicate that using large p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> doping-thickness products provides relatively voltage-independent transconductances and large reverse breakdown voltages, both of which are desirable in large signal applications. Decreasing the p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> doping increases the transconductance, which is desirable in logic applications. Comparison with performance of fabricated devices indicates good agreement between theory and experiment over a wide range of structural parameters. Microwave measurements on CAMFET's have yielded a gain of 10 dB at 9 GHz.
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