(Invited) Thickness-Modulated MoS2 for Electronic Applications

Abstract

Two dimensional transition metal dichalcogenides (TMDs) (e.g. MoS2) are atomically thin semiconductors that have remarkable properties such as a sizable electronic bandgap, relatively high carrier mobility, and flexibility. The atomically thin profile also facilitates the tuning of the electronic structure via surface effects such as charge traps and surface states. Two dimensional TMDs having two different thicknesses also have different electronic structures, forming heterojunctions. Here, we discuss the excellent rectification behavior of fabricated thickness-modulated (few layer - many layer) MoS2 diodes, including a large reverse breakdown voltage exceeding 10 V. The IV characteristics of the diodes can be strongly tuned by application of a gate voltage facilitating the demonstration of gate-voltage controlled tuning of simple electronic circuits including a voltage clipper and voltage regulator. The application of thickness-modulated diodes in high-frequency electronics is also discussed.