Abstract
A static induction thyristor having a mesh like gate region in front of the cathode, and between the gate region and the cathode a high resistance region having effective impurity concentration of 10 11 cm -3 -5×10 14 cm -3 is interposed, and the voltage gain decided by the gate length, gate interval and the gate-to-anode distance is made 10 or more so that the forward voltage drop is small, providing high speed switching ability and a large reverse breakdown voltage.
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