Abstract
In this paper, InGaAs/InP heterostructure based Cylindrical Gate Nanowire MOSFETs (CGNWMOSFET) is designed and its performance has been analyzed using silvaco ATLAS TCAD tool. The influence of the barrier thickness is investigated for perusal performance of an InGaAs/InP heterostructure CGNWMOSFET. The performance compared for various parameters on current, off current, Cut off Frequency (fT), Transconductance (gm), Gate to Source capacitance (Cgs), and Gate to Drain capacitance (Cgd). Results show significant variation in the performance of InGaAs/InP heterostructure CGNWMOSFET by varying the barrier thickness.
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