Abstract
The paper presents a comparative study between symmetric and asymmetric straggle architecture, where asymmetric nature is observed by considering straggle in source and drain side alternatively by using the data obtained from 2D numerical simulator Sentaurus TCAD. The analog parameters such as the transconductance (gm), the gain per unit current (gm/Ids)and the intrinsic gain (gmRo) has been analyzed. RF parameters such as intrinsic gate to source and gate to drain capacitances Cgs and Cgd, intrinsic gate to source and gate to drain resistances Rgs and Rgd, the transport delay τm, the unity gain cut off frequency (fT) and the maximum frequency of oscillation (fmax) are also computed using the Non Quasi Static(NQS) approach. The RF feasibility has also been scrutinized with the help of linearity analysis and Harmonic Distortion (HD). The Second and Third order HD (HD2 and HD3) and Total HD(THD) have been analyzed to evaluate distortion performance. The circuit performance is also analyzed by using the devices as a driver MOSFET in a single stage amplifier circuit whose dc performance as well as small signal gain is evaluated and Gain Bandwidth Product (GBW) is also calculated in this paper.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
