RF parameter extraction of underlap DG MOSFETs: a look up table based approach

Abstract

In this study, a look up table (LUT) is developed to extract the intrinsic RF parameters of underlap DG MOSFET (UDG-MOSFET) including the non-quasi-static (NQS) effect. The LUT-based approach proposed; can accurately extract complex RF parameters of UDG-MOSFET under different bias conditions, necessary for RF circuit simulations by an interpolation algorithm. The RF parameters including intrinsic gate to drain capacitance (C gd), gate to source capacitance (C gs), gate to drain resistance (R gd), gate to source resistance (R gs), gate to source transconductance (gm ), drain to source transconductance (g ds), transport delay (τm ), capacitance because of DIBL (C sdx) and inductance because of transport delay (L sd), cut-off frequency (f T) and maximum frequency of oscillation (f max) are extracted using LUT approach. Parameters extracted using LUT are compared with simulated data, considering the NQS effect, and are found in good agreement. For RF circuit applications a low-noise amplifier is designed, with the UDG-MOSFET, operating at a tuned frequency of 10 GHz.