Abstract
The investigation of new memory schemes is significant for future generations of electronic devices. The purpose of this research is to present a detailed analysis of the processes in the memory elements of a memory section with memristors and isolating Metal Oxide Semiconductor (MOS) transistors. For the present analysis, a modified window function previously proposed by the author in another memristor model is used. The applied model is based on physical nonlinear current-voltage and state-voltage characteristics. It is suitable for illustration of the processes in the memristors for both writing and reading procedures. The memory scheme is simulated using a nonlinear drift model with an improved window function. The used model was previously adjusted according to the reference Pickett model. The memory circuit is analyzed for writing and reading information procedures. The memristor current-voltage relationship is compared to physical experimental characteristics and to results acquired by the use of basic window functions. A satisfactory coincidence between the corresponding results is established. For the used logical signals, the memory elements operate in a state near to hard-switching mode. It is confirmed that the memristor model with a modified window function applied here is suitable for investigating complex memristor circuits for a general operating mode.
Highlights
The resistance-switching phenomenon, observed in many amorphous oxide materials, has been investigated since 1970 [1]
After analysis of the results derived by the simulations of the applied TiO2 memristor model with the applied modified window function and by the use of the original Biolek window function, it can be concluded that they have similar behavior during the memory operation processes, i.e., writing and reading information
The procedures of writing and reading in a fragment of a hybrid memory are successfully analyzed with the applied memristor model and the modified window function
Summary
The resistance-switching phenomenon, observed in many amorphous oxide materials, has been investigated since 1970 [1]. It has been established that such materials have the ability to change their conductance in accordance to the applied voltage and to memorize their state for several years [1,2]. The memristor is proposed in accordance to symmetry considerations and the relationships between the four basic electric quantities (current, voltage, electric charge and flux linkage) [3]. The resistor relates the current i and the voltage v. The capacitance C of a capacitor is defined as a ratio between the electric charge q and the voltage v. The inductor relates the magnetic flux Ψ and the electric current i. The memristor is an essential passive one-port element, together with the resistor, inductor, and capacitor [3,4,5]
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