Abstract
The investigation of new memory circuits is very important for the development of future generations’ non-volatile and Random Access Memories (RAM) memories and modern schemes for in-memory calculations. The purpose of the present research is to propose a detailed analysis of passive and hybrid memristor-based memory crossbars with separating metal oxide semiconductor (MOS) transistors. The considered memristors are based on HfO2. The transistors are applied to eliminate the parasitic paths in the schemes. For simulations, a previously proposed strongly nonlinear modified window function by the author together with a physical nonlinear memristor model is used. The considered model is adjusted according to the experimental i–v relationship of HfO2 memristors. The i–v relationship obtained by the simulation is successfully fitted to the respective relationship derived by physical measurements. A good coincidence between these characteristics is established. Several basic window functions are also applied for comparison to the corresponding results. The proposed model is analyzed in Personal Simulation Program with Integrated Circuit Emphasis (PSpice) and it is also used for simulation of a 5 × 5 fragment of a memristor memory crossbar with isolating transistors and for the analysis of a 6 × 6 passive memory matrix. The investigated matrices are simulated for writing, reading, and erasing information. It is established that the model proposed could be used for simulations of complex memristor circuits.
Highlights
The resistance-switching effect, observed in many amorphous oxides (TiO2, HfO2 and others), has been analyzed since 1970 [1,2]
The time diagrams of the memristor voltage and the corresponding state variable and memristance of M11 acquired during the memory circuit investigation is shown in Figure 5 for illustration of the change of the memristor’s resistance and its OFF to ON and ON to OFF switching for the applied memristor models
After analysis of the results derived by the simulations of the applied HfO2 memristor models together with the used modified and original window functions, it can be concluded that the respective current-voltage characteristics have similar behavior during memory operation processes, i.e., writing and reading information
Summary
The resistance-switching effect, observed in many amorphous oxides (TiO2 , HfO2 and others), has been analyzed since 1970 [1,2]. The Lehtonen-Laiho memristor model [20,21] is based on physical experiments, and on the mechanism of the current flow through semiconducting amorphous transition-metal oxides [20] It has good precision and a tunable mathematical expression [20,21]. The motivation for the present research is to partially fill this absence and to propose additional and detailed research of fragments of a hybrid memory, containing the fundamental electric elements for the basic writing and reading procedures: Word lines, bit lines, write enable, and read enable lines; 25 memristors; 10 separating transistors; and of a passive memristor circuit For these analyses, a highly nonlinear model [20,21].
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