Abstract
This letter presents a novel method to implement a 10–20 GHz low-noise amplifier (LNA) with simultaneous noise and input matching performance. That is, the Mille effect caused by the gate-drain parasitic capacitance Cgd is eliminated by converting the succeeding-stage impedance into the required load using frequency-dependent negative feedbacks and a π-type network. The corresponding analytical equation is also derived for the first time. To verify the feasibility, the circuit is fabricated via a 0.15-μm GaAs p-HEMT process with a compact size of 0.9×1.9 mm2. The measured results show that the proposed LNA features a peak gain of 26.1 dB, a minimum noise figure of 1.08 dB, and an input return loss of less than −15.8 dB.
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