Abstract
Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.
Highlights
Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs
Whether in the case of ultra-thin silicon slab structures[5], silicon nanowires[6], III–V nanowires[7] or more recently transition metal dichalcogenides (TMDs)[8,9,10], all of these exploratory threeterminal devices with metallic source and drain contacts and a channel that is gated from the source-to-channel to the drain-tochannel interface showed a variety of characteristics that are common for SB-MOSFETs
As we will describe in this work, the off-state transfer characteristics provide a window into the contact properties of SB-MOSFETs that cannot be extracted otherwise
Summary
Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxidesemiconductor field-effect transistors). The fit allows us to estimate the individual Schottky barrier heights and the bandgap (Eg 1⁄4 Fnsb þ Fpsb) from the off-state Ids À Vgs data, that is, any current data between the threshold voltages of the device.
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