Abstract
This paper analyses a refined edition of Junctionless Accumulation Mode (JAM) MOSFET, i.e., Dual- Metal Gate Stack Architecture of JAM Cylindrical Surrounding Gate (DMGSA- JAM- CSG) MOSFET. In this device, use of dual metal gates and a high-k gate stack is leading towards the enhancement of the device’s performance. Simulation of this device has been accomplished and the results are also compared with JAM-CSG MOSFET. It is seen that this device possesses improved characteristics, i.e., increased drain current, higher transconductance, lower output conductance, improved intrinsic gain and early voltage, high I on /I off ratio and reduced subthreshold slope. Thus, the overall performance of the device is much better and therefore is more capable for high gain amplifier and high speed switching applications. The simulation has been conducted on ATLAS 3-D device simulator.
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