Analog and radio-frequency (RF) performance evaluation of fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs

Abstract

Ultrathin-body (UTB) SOI MOSFETs, which possess excellent short-channel effect immunity and high current on-off ratio, are expected to put back the conventional MOSFETs in high performance digital integrated circuits by the end of year 2014 to continue the current scaling trend. In this paper, targeting systems-on-a-chip (SOC) applications, a simulation based extensive study is carried out to evaluate the analog and RF performance of source/drain and gate engineered ultrathin body SOI MOSFETs, as both the digital and analog performance of the device must be excellent for SOC applications. The performance evaluation has been done in terms of device parameters like device capacitances (Cgs and Cgd), drain current (Id), transconductance (gm), transconductance generation efficiency (gm/Id), intrinsic gain (gm/gd), cut-off frequency (fT) and the maximum frequency of oscillation (fmax). The RF figures-of-merit (FoM) i.e., fT and fmax have been determined by using H and Y parameters obtained from high frequency simulation of the structure. The numerical simulation is performed using ATLASTM, a 2-D device simulator from SILVACO Inc.