Examination of hole mobility in ultra-thin body SOI MOSFETs

Zhibin Ren Zhibin Ren,Meikei Ieong Meikei Ieong,H.-S.P Wong,P Oldiges,P.M Solomon,B Doris,T Kanarsky,R.A Roy,E.C Jones,O Dokumaci,R.J Miller,W Haensch

doi:10.1109/iedm.2002.1175777

Examination of hole mobility in ultra-thin body SOI MOSFETs

Zhibin Ren Zhibin Ren, Meikei Ieong Meikei Ieong + Show 10 more

https://doi.org/10.1109/iedm.2002.1175777

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Publication Date: Dec 8, 2002

Citations: 16

Affiliation: IBM (United States)

#Ultra-thin Body SOI MOSFETs #Ultra-thin Body SOI + Show 8 more

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Abstract

This paper presents an experimental examination of hole mobility in ultra-thin body (UTB) SOI MOSFETs, covering wide ranges of T/sub SOI/ (between /spl sim/3.7 nm and /spl sim/50 nm), and temperature (between /spl sim/79 K and /spl sim/320 K). This paper addresses the observed strong degradation of hole mobility at extremely thin T/sub SOI/, proposing an additional surface roughness scattering mechanism for the thinnest samples due to the perturbation of the conducting band potential stemming from spatial confinement.

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