Abstract
Detailed X-ray line profile studies have been made of thin films of hexagonal tellurium (an elemental semiconductor) in the thickness range 600–55 000 Å deposited by the vacuum evaporation method with normal incidence of the vapour beam. The analysis shows a considerable size effect (about 155–326 Å) and appreciable microstrain (about2.98(−1.47)×10 −3 ) in these tellurium films, as well as a near-isotropy in the size and strain parameters. The domain sizes for the fault-affected reflections ( H − K = 3 N ± 1, L 0 odd or even) indicate that the occurence of both intrinsic (α) and growth (β) stacking faults is negligible throughout the range considered here. A high density of dislocations (about 10 11 cm −2 ) has been observed in this work. Tellurium films grown on glass substrates were found to cleave along the prismatic plane instead of the basal plane, indicating the presence of c axis texture. A line shift analysis showed that the intrinsic stresses as well as the lattice parameter changes are small. Post-deposition annelaing affects the dislocation density slightly whereas all other microstructural parameters (except stacking faults, orientation and the intrinsic stresses) are significantly influenced for films deposited on pre-heated substrates.
Published Version
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