An unified model to characterize the strong inversion high-frequency capacitance in thin oxide MOS structures under Fowler-Nordheim tunneling injection condition

Abstract

A detailed analysis of the strong inversion high frequency capacitance under the Fowler-Nordheim (FN) tunneling injection is of great relevance for the modeling and characterization of the thin oxide MOS devices and full exploration of the capabilities of floating gate EEPROM. We found that the F-N current strongly affects the transient capacitance in the thin oxide MOS structures and has different behavior in an NMOS capacitor (NMOSC) and a PMOS capacitor (PMOSC). The quasi-equilibrium capacitance decreases for PMOSC and increases for NMOSC with increasing F-N current. In this paper, we present an unified physical model that relates the dynamics of the surface charge region of thin oxide PMOS and NMOS structures to the F-N tunneling injection.