Abstract
A buried Si(100) monolayer in GaAs has been investigated by soft X-ray emission spectroscopy and surface X-ray diffraction. In both cases the data were analyzed by computations. The SXE spectra were compared to ab initio results for several different atomic geometries. An optimal fit was found for 63% Si in Ga-sites according to these calculations, while SXD indicates a somewhat lower value. Details on the electronic structure were also extracted.
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