Abstract
This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices.
Highlights
To enable commercialisation of GaN high-speed power switching circuits, there are problems caused by parasitics that need to be overcome
It is imperative that power application designers have an idea about how to evaluate the effects of these parasitics when switching at very high speeds
The first method is to make use of different GaN HEMT physics models to experimentally extract the parasitic elements of the device studying their effects [6]
Summary
To enable commercialisation of GaN high-speed power switching circuits, there are problems caused by parasitics that need to be overcome. Many techniques are suggested for dealing with this issue: The first method is to make use of different GaN HEMT physics models to experimentally extract the parasitic elements of the device studying their effects [6]. The third method is to use software (e.g., TCAD, Ansoft or Maxwell Q3D) simulations to extract parasitics to model the device This requires knowledge about the physics and geometry of the devices, which are complex and not always available to the designer. The models that exist are complex, preventing the understanding of the switching behaviour for the power designer Considering all these facts, this paper first reviews the device and package parasitics of three different commercial GaN HEMTs. Secondly, it introduces RF process to accurately extract the impedances of the circuit. This research paper proposes a new behavioural model of GaN for application engineers without the need for any in depth knowledge about the physics nor geometry of the device
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