Abstract
In this study, based on a proposed universal global sensitivity parameter associated with temperatures and an improved nonlinear DC (direct current) I-V empirical model of room temperature, a new temperature-dependent DC I-V model for GaN HEMTs is established. The proposed universal global sensitivity parameter, a key value describing the temperature dependence of parameters in the DC I-V models, is helpful in determining which parameters in the models of room temperature have an impact on the temperature-dependent models. The consistency between the model and the experimental results indicates that the method for establishing the temperature-dependent DC I-V model is efficient.
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