Abstract
Ruthenium silicide (Ru 2Si 3) films were fabricated by an inter-layer reaction between ruthenium and silicon, and their oxidation resistance was investigated. These films remain conductive even after oxidation at 700 °C, which is more than 100 °C higher than that in the case of a TiN film. When a Ru/Ru 2Si 3/Si structure is heat-treated at 700 °C, the ruthenium film reacts with the silicon that diffused through the Ru 2Si 3 layer from the substrate, and forms Ru 2Si 3. On the other hand, if the Ru 2Si 3 layer is oxidized at 600 °C in advance and then the ruthenium film is deposited, further silicidation in the Ru/Ru 2Si 3/Si structure can be suppressed. This is because a 2 nm thick amorphous oxide layer formed at the Ru/Ru 2Si 3 interface suppresses the diffusion of silicon. However, the oxide layer causes the contact resistance of the Ru/Ru 2Si 3/Si structure to increase.
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