Abstract
Current achievements and future prospects of SR base x-ray lithography are explained through an account of research and development efforts made by NTT LSI Laboratories. The SR lithography system, including the compact SR light source Super-ALIS and beamlines with efficient mirrors, is now at the stage of practical use. The vertical x-ray steppers SS-1 and SS-2 have attained a repeatability of overlay accuracy as high as 25 nm (3σ). High-accuracy x-ray masks can be fabricated by applying the multiple-exposure method. Further improvement in pattern placement accuracy is expected with application of distortion compensation writing. Intense efforts made in development of x-ray mask inspection and repair technology resulted in the fabrication of defect-free x-ray masks. Test fabrication of CMOS/SIMOX LSIs has yielded fully functional devices, with an improved overlay accuracy of 0.1 to 0.15 μm (3σ), and a CD control of ±10% in 0.2 μm regions. Further application of SR lithography to the test fabrication of future LSIs will prompt the implementation of this technology into the practical process.
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