Abstract
A silicon ribbon growth method, String Ribbon, is discussed and compared with the two other vertical ribbon technologies. Manufacturing advances in production of 300 μm String Ribbon are described along with characterization of this ribbon, particularly dislocation distribution. Progress on the growth of 100 μm ribbon and in the making of higher efficiency cells are detailed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
