Abstract
The recent demand for low-cost photovoltaic arrays has renewed the interest in growing silicon in ribbon form. The approach used in the present paper for the growth of low-cost silicon ribbon is shown schematically. A pair of scanned, focused CO2 laser beams is directed onto both sides of a preformed silicon ribbon. A narrow (about 1 mm high) molten zone is formed across the full width of the ribbon. As the silicon ribbon is passed through the laser-heated zone, large grains are produced in the recrystallized ribbon. The laser beam path is outlined schematically. As a general rule, the lenses are not positioned so as to bring the laser beams to a fine focus, since highly focused beams would vaporize the silicon surface rather than serve to melt the bulk. Silicon ribbon has been grown at rates up to 13.3 cm/min by this approach. The best solar cell fabricated so far on this material has a conversion efficiency of 12.7%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
