Abstract
Silicon ribbon growth in the Inverted Stepanov (IS) configuration is described, in which non-wetting shape guides (or dies) are used. Silicon ribbons, 2 cm wide and 0.05 cm thick were grown reproducibly using a pyrolytic BN die. The contact angle of liquid silicon on BN is 110°. Silicon ribbons were heavily boron doped (5 × 10 19/cm −3) due to the contamination from the die. Crystalline defects were investigated by X-ray topography and chemical etching. The efficiency of solar cells made in the epitaxial silicon on IS ribbons was typically 8%.
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