An over 230 W, 0.5–2.1 GHz Wideband GaN Power Amplifier using Transmission-Line-Transformer-Based Combining Technique

Abstract

We fabricated a wideband gallium nitride (GaN) power amplifier (PA) using a power combiner with impedance transformation function. We designed a four-way planar impedance transformer power combiner based on the transmission line transformer (TLT) technique. The fabricated PA exhibited an average output power (Pout) of 233 W, average power-added-efficiency (PAE) of 42 %, and average drain efficiency (η) of 47% in the frequency range of 0.5 GHz to 2.1 GHz. The fabricated P A exhibits a wider fractional bandwidth (FBW) than a reported P A with an output power of over 200 W.