Abstract
In this paper, the regional modulation of impedance distribution (RMID) method for broadband power amplifier design is presented. We design and fabricate a wideband UHF-band gallium nitride (GaN) power amplifier (PA) consists of 2-chips containing self-developed GaN high electron mobility transistors (HEMTs) on a SiC substrate with gate lengths and widths of 0.25 μm and 10 mm, respectively. The pre-matching network designed by the RMID method converts the port impedances of the device to smaller real impedances, and exchanges the lower impedance ratio for wider frequency band characteristics. The distribution curve of the impedance points is tensioned or compressed according to the characteristics of the impedance transformation paths of different matching elements. As a result, the impedance distribution curve within the broadband range shows “knotting” characteristics. Then, the smaller impedances are matched to 50 Ω by low-Q microstrip impedance transforming lines. The measured output power, gain and efficiency values of the amplifier are higher than 100 W, 16 dB and 60%, respectively across 0.3–1.0 GHz, and the fractional bandwidth is up to 108%.
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